MT29F2G08ABBGAM79A3WC1
IC FLASH 2GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F2G08ABBGAM79A3WC1 is a 2Gbit NAND Flash memory device with a parallel interface organization of 256M x 8. This non-volatile memory utilizes advanced FLASH-NAND technology and is supplied in a Die package, suitable for surface mount applications. Operating within a voltage range of 1.7V to 1.95V and an ambient temperature range of 0°C to 70°C, this component is engineered for demanding applications. Its robust architecture makes it a suitable choice for consumer electronics, industrial control systems, and automotive applications requiring reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
