MT29F2G08ABBEAH4:E TR
IC FLASH 2GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F2G08ABBEAH4-E-TR is a 2Gbit parallel NAND flash memory device. This non-volatile memory component features a memory organization of 256M x 8 and operates with a supply voltage range of 1.7V to 1.95V. The device is housed in a 63-VFBGA (9x11) package, suitable for surface mount applications. Its parallel interface facilitates data transfer. This NAND flash memory is commonly utilized in applications within the consumer electronics, industrial, and automotive sectors. The component is supplied on a tape and reel for automated assembly processes. The operating temperature range for this device is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9x11) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
