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MT29F2G08ABAGAM79A3WC1L

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MT29F2G08ABAGAM79A3WC1L

IC FLASH 2GBIT PARALLEL DIE

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. presents the MT29F2G08ABAGAM79A3WC1L, a 2Gbit Parallel NAND Flash memory die. This non-volatile memory component utilizes SLC (Single-Level Cell) technology, offering a robust and efficient solution for data storage. The memory interface is parallel, with an organization of 256M x 8 bits. Designed for a supply voltage range of 2.7V to 3.6V, it operates within an ambient temperature range of 0°C to 70°C. This component is suitable for applications in industrial control, consumer electronics, and embedded systems requiring reliable, high-density data storage with a parallel interface. The device is supplied in bulk packaging as a die.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND (SLC)
Memory FormatFLASH
Supplier Device PackageDie
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256M x 8
ProgrammableNot Verified

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