MT29F2G08ABAGAH4-AAT:G TR
IC FLASH 2GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
The Micron Technology Inc. MT29F2G08ABAGAH4-AAT-G-TR is a 2Gbit NAND Flash memory device featuring an SLC (Single-Level Cell) architecture. This component offers parallel interface access with an access time of 20 ns, optimized for high-speed data operations. The memory organization is 256M x 8, providing efficient data handling. Designed for demanding applications, it operates within a voltage range of 2.7V to 3.6V and is qualified to AEC-Q100 standards, indicating suitability for the automotive industry. The device is packaged in a 63-VFBGA (9x11) configuration, designed for surface mounting and supplied on tape and reel. Its operating temperature range is -40°C to 105°C (TA). This non-volatile memory is well-suited for automotive, industrial, and embedded systems requiring reliable and fast data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9x11) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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