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MT29F2G08ABAEAM69A3WC1

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MT29F2G08ABAEAM69A3WC1

IC FLASH 2GBIT PARALLEL DIE

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. FLASH - NAND Memory IC, MT29F2G08ABAEAM69A3WC1, offers a 2Gbit parallel interface for high-density data storage applications. This non-volatile memory component features a memory organization of 256M x 8, providing efficient data management. Designed for surface mount applications, it operates within a voltage range of 2.7V to 3.6V and is specified for an ambient temperature range of -40°C to 85°C. The component is supplied as a die in bulk packaging, suitable for advanced manufacturing processes. This device finds application in industrial control systems, automotive electronics, and consumer electronics requiring reliable data storage solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device PackageDie
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256M x 8
ProgrammableNot Verified

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