Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT29F2G08ABAEAH4-ITE:E TR

Banner
productimage

MT29F2G08ABAEAH4-ITE:E TR

IC FLASH 2GBIT PARALLEL 63VFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F2G08ABAEAH4-ITE-E-TR is a 2Gbit NAND Flash memory device with a parallel interface. This non-volatile memory component is organized as 256M x 8 and is housed in a 63-VFBGA (9x11) package, suitable for surface mount applications. Operating within a voltage range of 2.7V to 3.6V, this device is designed for demanding environments with an operating temperature range of -40°C to 85°C. The memory technology employed is FLASH - NAND. This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring reliable data storage. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case63-VFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package63-VFBGA (9x11)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
EDF8164A3PF-JD-F-R TR

IC DRAM 8GBIT PARALLEL 933MHZ

product image
MT49H16M18CSJ-25 IT:B

IC DRAM 288MBIT PARALLEL 144FBGA