Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT29F2G08ABAEAH4:E TR

Banner
productimage

MT29F2G08ABAEAH4:E TR

IC FLASH 2GBIT PARALLEL 63VFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT29F2G08ABAEAH4-E-TR is a 2Gbit NAND Flash memory device with a parallel interface. This non-volatile memory component features a memory organization of 256M x 8 and is housed in a 63-VFBGA package, measuring 9x11mm. Designed for surface mount applications, it operates within a voltage range of 2.7V to 3.6V and has an operating temperature of 0°C to 70°C. The MT29F2G08ABAEAH4-E-TR is supplied on a tape and reel for high-volume manufacturing. This component is suitable for applications in consumer electronics, industrial control systems, and data storage solutions requiring high-density, parallel flash memory.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 2 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case63-VFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package63-VFBGA (9x11)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization256M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
EDF8164A3PF-JD-F-R TR

IC DRAM 8GBIT PARALLEL 933MHZ

product image
MT49H16M18CSJ-25 IT:B

IC DRAM 288MBIT PARALLEL 144FBGA