Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT29F256G08EFEBBWP-M:B TR

Banner
productimage

MT29F256G08EFEBBWP-M:B TR

IC FLASH 256GBIT PAR 48TSOP I

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. presents the MT29F256G08EFEBBWP-M-B-TR, a 256Gbit NAND Flash memory device. This non-volatile memory utilizes a parallel interface and is organized as 32G x 8. Fabricated with TLC (Triple-Level Cell) technology, it offers high-density data storage suitable for applications demanding robust performance. The device operates within a voltage range of 2.7V to 3.6V and features a 48-TSOP I package, designed for surface mount applications. Packaged on tape and reel, this component is engineered for high-volume production environments. Its operating temperature range is 0°C to 70°C. This memory solution is widely implemented in consumer electronics, automotive systems, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case48-TFSOP (0.724"", 18.40mm Width)
Mounting TypeSurface Mount
Memory Size256Gbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND (TLC)
Memory FormatFLASH
Supplier Device Package48-TSOP I
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization32G x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
EDF8164A3PF-JD-F-R TR

IC DRAM 8GBIT PARALLEL 933MHZ

product image
MT49H16M18CSJ-25 IT:B

IC DRAM 288MBIT PARALLEL 144FBGA