Micron Technology Inc.'s MT29F256G08EFEBBWP-B is a 256Gbit NAND Flash memory device. This component features a parallel interface and is packaged in a 48-TSOP I configuration, designed for high-density data storage applications. It operates with a standard voltage supply and offers robust performance characteristics suitable for demanding embedded systems. The MT29F256G08EFEBBWP-B is utilized in various industrial sectors, including consumer electronics, networking infrastructure, and automotive applications where reliable and high-capacity non-volatile storage is critical. Its architecture supports advanced error correction and wear-leveling mechanisms to ensure data integrity and extended lifespan.
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Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray