MT29F256G08EECBBJ4-6:B
IC FLASH 256GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F256G08EECBBJ4-6-B is a 256Gbit NAND Flash memory device utilizing Triple-Level Cell (TLC) technology. This non-volatile memory component features a parallel interface and operates at a clock frequency of 167 MHz. The memory organization is 32G x 8, providing a substantial storage capacity. Supplied in a 132-VBGA (12x18) package, it is designed for surface mount applications. This component is suitable for demanding applications across various industries, including automotive, networking, and consumer electronics, where high-density, reliable flash storage is critical. The operating temperature range is 0°C to 70°C, with a supply voltage range of 2.7V to 3.6V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 256Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Clock Frequency | 167 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 32G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
