Micron Technology Inc. presents the MT29F256G08EBHBFJ4-3ITFES-B-TR, a 256 Gbit NAND Flash memory device. This component utilizes a 132-contact Very Thin Ball Grid Array (VBGA) package, facilitating high-density board integration. Designed for demanding applications, it offers robust performance and reliability. The parallel interface ensures efficient data transfer for applications requiring high throughput. This memory solution is well-suited for high-capacity storage in consumer electronics, automotive systems, and industrial automation.
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Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray