MT29F256G08EBHBFJ4-3ITFES:B
IC FLASH 256GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F256G08EBHBFJ4-3ITFES-B is a high-performance NAND Flash memory device offering 256 gigabits of storage capacity. This component features a parallel interface for efficient data transfer and is packaged in a 132-ball VFBGA. Designed for demanding applications, it supports advanced error correction and wear-leveling technologies to ensure data integrity and longevity. The MT29F256G08EBHBFJ4-3ITFES-B is suitable for use in a wide range of industrial, automotive, and consumer electronics where reliable, high-density non-volatile storage is critical. Its robust architecture and operating characteristics make it a compelling choice for advanced embedded systems and data storage solutions.
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Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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