MT29F256G08EBCAGB16A3WC1-R
IC FLASH 256GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F256G08EBCAGB16A3WC1-R is a 256Gbit NAND Flash memory device organized as 32G x 8. This non-volatile memory utilizes a parallel interface with a clock frequency of 333 MHz, supporting TLC (Triple-Level Cell) technology. The device is supplied as a Die, suitable for surface mount applications within an operating temperature range of 0°C to 70°C (TA). This component is commonly found in applications requiring high-density data storage, including consumer electronics, networking equipment, and industrial control systems. The voltage supply range for this part is 2.7V to 3.6V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 256Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 32G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
