MT29F1T08EELEEJ4-R:E TR
IC FLASH 1TBIT VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc.'s MT29F1T08EELEEJ4-R-E-TR is a 1Tbit parallel NAND flash memory device. This component utilizes Triple-Level Cell (TLC) technology, offering high density for advanced storage solutions. The memory is organized as 128G x 8 and is housed in a 132-VBGA (12x18) package, designed for surface mount applications. Operating within a voltage range of 2.6V to 3.6V and an ambient temperature range of 0°C to 70°C, this device is suitable for demanding industrial and consumer electronics applications requiring robust, non-volatile data storage. The component is supplied in tape and reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C |
| Voltage - Supply | 2.6V ~ 3.6V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 128G x 8 |
| Programmable | Not Verified |