MT29F1T08EEHBFJ4-T:B TR
IC FLASH 1TBIT PARALLEL 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F1T08EEHBFJ4-T-B-TR is a 1Tbit NAND Flash memory device, utilizing a parallel interface. This component features a 128G x 8 memory organization and is built with TLC (Triple-Level Cell) technology, offering high density for advanced storage solutions. The device operates within a voltage range of 1.7V to 1.95V and is supplied in a 132-VBGA (12x18) package, suitable for surface mount applications. The operating temperature range is 0°C to 70°C (TA). This memory solution is commonly integrated into applications demanding high-capacity, reliable non-volatile storage, including consumer electronics, networking equipment, and industrial systems. The memory is provided on a tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 128G x 8 |
| Programmable | Not Verified |
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