MT29F1T08EEHBFJ4-R:B
IC FLASH 1TBIT PARALLEL 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT29F1T08EEHBFJ4-R-B, a 1Tbit NAND Flash memory device with a parallel interface. This non-volatile memory utilizes Triple-Level Cell (TLC) technology and is organized as 128G x 8. The component is housed in a 132-VBGA (12x18) package, suitable for surface-mount applications. Operating within a voltage range of 1.7V to 1.95V, this device is designed for demanding applications in sectors such as automotive, industrial, and enterprise storage. The operating temperature range is specified as 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 132-VBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (TLC) |
| Memory Format | FLASH |
| Supplier Device Package | 132-VBGA (12x18) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 128G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
