MT29F1T08EEHAFJ4-3ITFES:A TR
IC FLASH 1TBIT PARALLEL 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT29F1T08EEHAFJ4-3ITFES-A-TR, a high-density 1Tbit parallel flash memory device. This component utilizes advanced NAND flash technology, offering robust data storage solutions. Encapsulated in a 132-lead VBGA package, it is designed for demanding applications requiring significant non-volatile memory capacity. The device supports parallel interface operation, facilitating efficient data transfer rates. This memory solution is commonly integrated into systems for data logging, firmware storage, and embedded applications across various industries, including industrial automation, consumer electronics, and networking equipment. Its specifications are tailored for high-performance storage requirements in complex electronic designs.
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Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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