MT29F1HT08ELHBBG1-3R:B TR
IC FLASH 1.5TBIT PAR 272VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT29F1HT08ELHBBG1-3R-B-TR, a high-density NAND Flash memory component. This device offers a substantial 1.5Tbit (Terabit) storage capacity in a parallel interface configuration, designed for demanding data storage applications. The 272-ball Very Fine Pitch Ball Grid Array (VBGA) package ensures compact integration into complex PCB layouts. Optimized for performance and reliability, this NAND Flash memory is suitable for use in industrial computing, networking infrastructure, and advanced consumer electronics where robust and high-capacity storage is critical. The component adheres to industry standards for NAND Flash technology, providing efficient read and write operations.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
