MT29F1G08ABBFAH4-AAT:F
IC FLASH 1GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29F1G08ABBFAH4-AAT-F is a 1Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory utilizes Single-Level Cell (SLC) technology and offers an access time of 25 ns. The memory organization is 128M x 8, with a page write cycle time also specified at 25 ns. Designed for robust operation, this component operates within a voltage supply range of 1.7V to 1.95V and an extended temperature range of -40°C to 105°C. It is housed in a 63-VFBGA (9x11) package suitable for surface mounting. The MT29F1G08ABBFAH4-AAT-F is AEC-Q100 qualified, indicating its suitability for automotive applications, as well as other demanding industrial and consumer electronics environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9x11) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
