MT29F1G08ABAEAM68M3WC1
IC FLASH 1GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F1G08ABAEAM68M3WC1 is a 1Gbit NAND Flash memory device organized as 128M x 8. This non-volatile memory utilizes a parallel interface and is provided in a Die package suitable for surface mounting. Operating within a voltage range of 2.7V to 3.6V, this component is designed for applications requiring high-density data storage and fast read/write operations. Its robust NAND Flash technology makes it a reliable solution for embedded systems, consumer electronics, and automotive applications where data integrity and performance are critical. The operating temperature range is 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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