MT29F128G08CECGBJ4-37ES:G TR
IC FLASH 128GBIT PAR 132VBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT29F128G08CECGBJ4-37ES-G-TR, a 128 Gigabit NAND Flash memory component. This high-density storage solution is designed for demanding applications requiring robust data retention and high performance. Featuring a parallel interface and a 132-pin VBGA package, it offers efficient integration into complex board designs. The device is suitable for use in a wide range of industries, including automotive, industrial, and consumer electronics, where reliable non-volatile storage is critical. Its architecture supports advanced error correction and wear-leveling algorithms to ensure data integrity and extended operational lifespan. The component is delivered in a Tape & Reel (TR) package for automated assembly processes.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
