MT29F128G08CBEBBL85C3WC1-R
IC FLASH 128GBIT PARALLEL DIEManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29F128G08CBEBBL85C3WC1-R is a 128Gbit NAND Flash memory device featuring a parallel interface. Organized as 16G x 8, this non-volatile memory solution is designed for high-density data storage applications. The component operates within a voltage range of 2.7V to 3.6V and is specified for operation in an ambient temperature range of 0°C to 70°C. Its surface mount capability and die package make it suitable for integration into various electronic systems. This memory component is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust and high-capacity flash storage. The technology employed is advanced NAND Flash, ensuring reliable data retention and efficient read/write operations.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Memory Size | 128Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | Die |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 16G x 8 |
| Programmable | Not Verified |
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