MT29E512G08CMCCBH7-6:C TR
IC FLASH 512GBIT PAR 152TBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. 512 Gbit Parallel NAND Flash Memory, part number MT29E512G08CMCCBH7-6-C-TR. This high-density NAND flash device offers 512 gigabits of storage capacity, organized in a parallel interface for high-throughput data transfer. The component features advanced error correction code (ECC) capabilities and wear-leveling algorithms for enhanced data integrity and endurance. Designed for demanding applications, it is suitable for use in enterprise storage, data centers, and high-performance computing. The device is supplied in a 152-ball TBGA package, delivered on tape and reel for automated assembly processes.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
