MT29E4T08EYHBBG9-3ES:B
IC FLASH 4TBIT PARALLEL 333MHZManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29E4T08EYHBBG9-3ES-B is a high-density NAND flash memory component with a 4Tbit capacity. This parallel interface device operates at a maximum frequency of 333MHz, offering efficient data transfer for demanding applications. Designed for applications requiring substantial non-volatile storage, this component is suitable for use in enterprise storage, data centers, and high-performance computing environments. The MT29E4T08EYHBBG9-3ES-B is supplied in tray packaging.
Additional Information
Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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