MT29E3T08EUHBBM4-3:B TR
IC FLASH 3TBIT PARALLEL 333MHZManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT29E3T08EUHBBM4-3-B-TR is a 3Tbit NAND Flash memory device featuring a parallel interface and a maximum clock frequency of 333 MHz. This non-volatile memory component is organized as 384G x 8 and operates within a voltage range of 2.5V to 3.6V. The MT29E3T08EUHBBM4-3-B-TR is supplied in Tape & Reel (TR) packaging and is designed for ambient operating temperatures from 0°C to 70°C. This NAND flash memory is suitable for applications in enterprise storage, data centers, and high-performance computing where robust and high-density data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 3Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 384G x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
