MT29E3T08EUHBBM4-3:B
IC FLASH 3TBIT PARALLEL 333MHZManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29E3T08EUHBBM4-3-B is a 3Tbit NAND Flash memory device featuring a parallel interface. This high-density non-volatile memory operates at a clock frequency of 333 MHz and is organized as 384G x 8. Designed for demanding applications, this component is suitable for use in consumer electronics, telecommunications infrastructure, and automotive systems. The device operates within a voltage range of 2.5V to 3.6V and has an operating temperature range of 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 3Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 384G x 8 |
| Programmable | Not Verified |
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