MT29E3T08EQHBBG2-3ES:B
IC FLASH 3TBIT PAR 272LFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29E3T08EQHBBG2-3ES-B is a 3-terabit NAND Flash memory device. This component features a parallel interface and is housed in a 272-ball LFBGA package, designed for high-density data storage applications. Its architecture supports advanced error correction and wear-leveling mechanisms crucial for robust data integrity in demanding environments. This device is suitable for use in enterprise storage, data centers, and industrial computing systems where high capacity and reliability are paramount. The advanced NAND technology ensures efficient read and write operations, making it a foundational element for next-generation storage solutions.
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Series: RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: TrayDownload Free CAD Model:
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