MT29E2T08CUHBBM4-3:B TR
IC FLASH 2TBIT PARALLEL 333MHZManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT29E2T08CUHBBM4-3-B-TR is a 2Tbit NAND Flash memory device featuring a parallel interface. This high-density memory solution operates at a clock frequency of 333 MHz and is organized as 256G x 8 bits. Engineered for demanding applications, it supports a wide supply voltage range of 2.5V to 3.6V and operates within an ambient temperature range of 0°C to 70°C. The device is supplied in Tape & Reel packaging, suitable for high-volume automated assembly processes. Its robust NAND Flash technology makes it a critical component in various data storage systems, including enterprise storage, networking equipment, and consumer electronics where reliable and high-capacity non-volatile memory is essential.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Memory Size | 2Tbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.5V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 333 MHz |
| Memory Format | FLASH |
| Supplier Device Package | - |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 256G x 8 |
| Programmable | Not Verified |
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