MT28EW512ABA1LJS-0AAT
IC FLASH 512MBIT PARALLEL 56TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. FLASH NOR Memory IC, MT28EW512ABA1LJS-0AAT, offers a 512Mbit density with a parallel interface. This non-volatile memory component provides an access time of 105 ns and a write cycle time of 60 ns (word/page). The memory organization is available as 64M x 8 or 32M x 16. Designed for demanding applications, it operates within a voltage range of 2.7V to 3.6V and features an extended operating temperature range of -40°C to 105°C (TA). This AEC-Q100 qualified component is housed in a 56-TSOP package, suitable for surface mounting. Its automotive grade qualification makes it ideal for use in automotive infotainment systems, advanced driver-assistance systems (ADAS), and industrial control applications requiring robust and reliable memory solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 105 ns |
| Memory Organization | 64M x 8, 32M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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