MT28EW512ABA1HPC-0AAT
IC FLASH 512MBIT PARALLEL 64LBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT28EW512ABA1HPC-0AAT is a 512Mbit NOR Flash memory device featuring a parallel interface. This component offers an access time of 105 ns and is organized as 64M x 8 or 32M x 16. The device operates from a voltage supply range of 2.7V to 3.6V. It is housed in a 64-LBGA package with dimensions of 11x13. Designed for demanding applications, this memory component is AEC-Q100 qualified and suitable for automotive environments, operating within an ambient temperature range of -40°C to 105°C. Its technology is FLASH - NOR, with a word/page write cycle time of 60 ns. This surface-mount device is typically supplied in trays.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-LBGA (11x13) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 105 ns |
| Memory Organization | 64M x 8, 32M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
