Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT28EW01GABA1LJS-0AAT

Banner
productimage

MT28EW01GABA1LJS-0AAT

IC FLASH 1GBIT PARALLEL 56TSOP

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT28EW01GABA1LJS-0AAT is a 1Gbit NOR Flash memory device featuring a parallel interface. This non-volatile memory component offers an access time of 105 ns and is organized as 128M x 8 or 64M x 16. Operating from a voltage supply range of 2.7V to 3.6V, it has a word/page write cycle time of 60 ns. The device is housed in a 56-TSOP package, suitable for surface mounting. Qualified to AEC-Q100 standards and designated for automotive applications, it operates within an ambient temperature range of -40°C to 105°C. This memory solution is commonly utilized in automotive systems, industrial control, and telecommunications infrastructure.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case56-TFSOP (0.724"", 18.40mm Width)
Mounting TypeSurface Mount
Memory Size1Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR
Memory FormatFLASH
Supplier Device Package56-TSOP
GradeAutomotive
Write Cycle Time - Word, Page60ns
Memory InterfaceParallel
Access Time105 ns
Memory Organization128M x 8, 64M x 16
ProgrammableNot Verified
QualificationAEC-Q100

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA