MT28EW01GABA1HJS-0SIT
IC FLASH 1GBIT PARALLEL 56TSOPManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. NOR Flash memory component, part number MT28EW01GABA1HJS-0SIT, offers 1Gbit of non-volatile storage with a parallel interface. This device features a 95 ns access time and a word/page write cycle time of 60 ns. It operates from a 2.7V to 3.6V supply and is housed in a 56-TSOP package, suitable for surface mount applications. The memory organization is configurable as 128M x 8 or 64M x 16. This component is designed for operation across a temperature range of -40°C to 85°C. Its robust performance and density make it suitable for applications in automotive, industrial, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 95 ns |
| Memory Organization | 128M x 8, 64M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
MTFC256GASAONS-AIT
IC FLASH 2TBIT UFS2.1 153TFBGA
