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MT28EW01GABA1HJS-0AAT TR

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MT28EW01GABA1HJS-0AAT TR

IC FLASH 1GBIT PARALLEL 56TSOP

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. presents the MT28EW01GABA1HJS-0AAT-TR, a 1Gbit NOR FLASH memory component. This non-volatile memory features a parallel interface with a 105 ns access time and a write cycle time of 60 ns for word/page operations. The memory organization is available as 128M x 8 or 64M x 16. Designed for demanding applications, this component operates within a supply voltage range of 2.7V to 3.6V and is qualified to AEC-Q100 standards, making it suitable for automotive applications. The device is housed in a 56-TSOP package, specifically a 56-TFSOP with dimensions of 0.724 inches (18.40mm) width, and is supplied in tape and reel (TR) packaging for surface mount installation. Its operating temperature range is from -40°C to 105°C (TA). This NOR FLASH memory is utilized in automotive, industrial, and consumer electronics sectors requiring reliable data storage.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case56-TFSOP (0.724"", 18.40mm Width)
Mounting TypeSurface Mount
Memory Size1Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR
Memory FormatFLASH
Supplier Device Package56-TSOP
GradeAutomotive
Write Cycle Time - Word, Page60ns
Memory InterfaceParallel
Access Time105 ns
Memory Organization128M x 8, 64M x 16
ProgrammableNot Verified
QualificationAEC-Q100

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