M29W640GH70NA6E
IC FLASH 64MBIT PAR 48TSOP IManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the M29W640GH70NA6E, a 64Mbit NOR Flash memory device with a parallel interface. This non-volatile memory offers an access time of 70 ns and is organized as 8M x 8 or 4M x 16. Designed for robust performance, it operates within a supply voltage range of 2.7V to 3.6V and features a word/page write cycle time of 70 ns. The device is housed in a 48-TSOP I package, suitable for surface mount applications. Its operational temperature range is specified from -40°C to 85°C (TA). This component is widely utilized in industrial, automotive, and consumer electronics applications requiring reliable non-volatile storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP I |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 8M x 8, 4M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
