M29W640GB90NA6E
IC FLASH 64MBIT PAR 48TSOP IManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc.'s M29W640GB90NA6E is a 64Mbit NOR Flash memory device featuring a parallel interface. This non-volatile memory component offers an access time of 90 ns and is organized as 8M x 8 or 4M x 16. Operating within a supply voltage range of 2.7V to 3.6V, it is designed for surface mount applications and is supplied in a 48-TSOP I package. The device supports a word/page write cycle time of 90 ns and is rated for an operating temperature range of -40°C to 85°C. This component is widely utilized in industrial, automotive, and consumer electronics applications requiring reliable, high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP I |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 8M x 8, 4M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
