M29W640GB70ZA3E
IC FLASH 64MBIT PARALLEL 48TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the M29W640GB70ZA3E, a 64Mbit NOR Flash memory component. This high-performance device features a parallel interface with an access time of 70 ns, supporting both 8M x 8 and 4M x 16 memory organizations. Engineered for demanding applications, it operates within a voltage range of 2.7V to 3.6V and offers a write cycle time of 70 ns for words and pages. The M29W640GB70ZA3E is housed in a compact 48-TFBGA (6x8) package, designed for surface mounting. Its robust construction ensures reliable operation across an industrial temperature range of -40°C to 125°C (TA). This non-volatile memory solution is widely adopted in sectors such as automotive, industrial automation, and embedded systems where dependable data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 64Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 48-TFBGA (6x8) |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 8M x 8, 4M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
