M29W512GH7AN6E
IC FLASH 512MBIT PARALLEL 56TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. M29W512GH7AN6E is a 512Mbit NOR Flash memory device featuring a parallel interface. This non-volatile memory component offers an access time of 70 ns and is organized as 64M x 8 or 32M x 16. The M29W512GH7AN6E operates within a voltage range of 2.7V to 3.6V, with a write cycle time of 70ns. It is housed in a 56-TSOP (56-TFSOP) package suitable for surface mounting. This device finds application in various industrial sectors, including automotive, telecommunications, and consumer electronics, where reliable data storage and program execution are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 64M x 8, 32M x 16 |
| Programmable | Not Verified |
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