M29F800FB5AN6F2
FLASH NOR 8Mb (1M x 8, 512K x 16Manufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. FLASH NOR Memory IC, M29F800FB5AN6F2. This non-volatile memory component offers 8Mbit of storage with a parallel interface. It supports both 1M x 8 and 512K x 16 memory organizations, providing flexible data access. Featuring an access time of 55 ns and a write cycle time of 55 ns, this device is designed for efficient operation. The M29F800FB5AN6F2 is supplied in a 48-TSOP package, suitable for surface mounting. Operating within a voltage range of 4.5V to 5.5V, it is qualified to AEC-Q100 standards and operates reliably across a temperature range of -40°C to 85°C. This component is utilized in automotive applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 1M x 8, 512K x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
