M29F800DB55N6
IC FLASH 8MBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. M29F800DB55N6 is a high-performance 8Mbit NOR Flash memory integrated circuit featuring a parallel interface. This non-volatile memory device offers an access time of 55 ns and a write cycle time of 55 ns for word/page operations. The memory organization is available as 1M x 8 or 512K x 16, catering to diverse application needs. Designed for surface mounting, it is supplied in a 48-TSOP package. Operating within a voltage range of 4.5V to 5.5V, the M29F800DB55N6 is suitable for industrial, automotive, and consumer electronics applications requiring reliable data storage and program memory. The component operates across an ambient temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 1M x 8, 512K x 16 |
| Programmable | Not Verified |
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