M29F200FB55M3E2
IC FLASH 2MBIT PARALLEL 44SOManufacturer: Micron Technology Inc.
Categories: Memory
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The Micron Technology Inc. M29F200FB55M3E2 is a 2Mbit NOR Flash memory device featuring a parallel interface and a 55 ns access time. This non-volatile memory is organized as 256K x 8 or 128K x 16 bits, offering flexibility for various data storage needs. Operating across a voltage range of 4.5V to 5.5V, it is designed for surface mounting within a 44-SOIC package. The device exhibits a word/page write cycle time of 55 ns and operates reliably within an ambient temperature range of -40°C to 125°C. This component is commonly utilized in automotive, industrial, and consumer electronics applications requiring robust and fast non-volatile data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-SOIC (0.496"", 12.60mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 44-SO |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 256K x 8, 128K x 16 |
| Programmable | Not Verified |
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