M29F200BT70M6E
IC FLASH 2MBIT PARALLEL 44SOManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. M29F200BT70M6E is a 2Mbit NOR Flash memory integrated circuit featuring a parallel interface. This non-volatile memory offers an access time of 70 ns and a write cycle time of 70 ns for word/page operations. The memory organization is configurable as 256K x 8 or 128K x 16. Operating within a voltage range of 4.5V to 5.5V, the device is housed in a 44-SOIC (0.496", 12.60mm Width) surface-mount package. Its operating temperature range is -40°C to 85°C (TA). This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring robust, high-speed non-volatile data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-SOIC (0.496"", 12.60mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 44-SO |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 256K x 8, 128K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
