M29DW256G7ANF6E
IC FLASH 256MBIT PARALLEL 56TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. M29DW256G7ANF6E is a 256Mbit NOR FLASH memory device featuring a parallel interface. This non-volatile memory component offers an access time of 70 ns and a word/page write cycle time of 70 ns. The memory organization is 16M x 16, and it operates with a supply voltage range of 2.7V to 3.6V. The M29DW256G7ANF6E is housed in a 56-TSOP package suitable for surface mounting and operates within an industrial temperature range of -40°C to 85°C. This device finds application in various sectors including automotive, industrial automation, and consumer electronics, where reliable high-density Flash memory is crucial.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 256Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 16M x 16 |
| Programmable | Not Verified |
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