EDB4432BBBJ-1DAIT-F-R TR
IC DRAM 4GBIT PARALLEL 134FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. EDB4432BBBJ-1DAIT-F-R-TR is a 4Gbit Mobile LPDDR2 SDRAM memory integrated circuit. This device features a parallel interface and operates at a clock frequency of 533 MHz. The memory organization is 128M x 32, providing a substantial capacity for demanding applications. Packaged in a 134-FBGA (10x11.5) for surface mounting, this component is designed for efficient integration into compact board designs. It supports a supply voltage range of 1.14V to 1.95V and operates within an industrial temperature range of -40°C to 85°C. Its advanced technology makes it suitable for use in automotive, consumer electronics, and industrial automation sectors where high-speed, high-density volatile memory is required. The part is supplied on tape and reel for high-volume manufacturing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 134-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Voltage - Supply | 1.14V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR2 |
| Clock Frequency | 533 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 134-FBGA (10x11.5) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 128M x 32 |
| Programmable | Not Verified |
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