Home

Products

Integrated Circuits (ICs)

Memory

Memory

ECF840AAACN-C1-Y3

Banner
productimage

ECF840AAACN-C1-Y3

IC DRAM 8GBIT PARALLEL

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. LPDDR3 DRAM IC, part number ECF840AAACN-C1-Y3, offers 8Gbit of parallel memory. This volatile memory component utilizes SDRAM technology, specifically Mobile LPDDR3, and is organized as 512M x 16. It operates within a supply voltage range of 1.14V to 1.95V. This component is suitable for applications in the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Memory Size8Gbit
Memory TypeVolatile
Voltage - Supply1.14V ~ 1.95V
TechnologySDRAM - Mobile LPDDR3
Memory FormatDRAM
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization512M x 16
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA