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MV1N8154US/TR

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MV1N8154US/TR

LOW CAPACITANCE TVS

Manufacturer: Microchip Technology

Categories: TVS Diodes

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Microchip Technology's MV1N8154US-TR is a unidirectional silicon avalanche diode designed for transient voltage suppression. This device offers a low clamping voltage of 18.2V at a peak pulse current (Ipp) of 8.24A (10/1000µs waveform), dissipating up to 150W of peak pulse power. The reverse standoff voltage is rated at 11V, with a breakdown voltage (Vbr) minimum of 12.4V. Engineered for demanding environments, it operates across a junction temperature range of -55°C to 175°C. The component is housed in an A, SQ-MELF package, supplied on tape and reel for automated assembly. Its low capacitance and robust protection characteristics make it suitable for general-purpose applications in industries such as automotive, industrial control, and telecommunications.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
TypeZener
Operating Temperature-55°C ~ 175°C (TJ)
ApplicationsGeneral Purpose
Capacitance @ Frequency-
Current - Peak Pulse (10/1000µs)8.24A
Voltage - Reverse Standoff (Typ)11V
Supplier Device PackageA, SQ-MELF
Unidirectional Channels1
Voltage - Breakdown (Min)12.4V
Voltage - Clamping (Max) @ Ipp18.2V
Power - Peak Pulse150W
Power Line ProtectionNo

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