MUPTB8E3
TVS DIODE 8VWM 13.7VC POWERMITE1Manufacturer: Microchip Technology
Categories: TVS Diodes
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Microchip Technology's MUPTB8E3 is a bidirectional transient voltage suppressor (TVS) diode designed for robust overvoltage protection. This component features a reverse standoff voltage of 8V and a breakdown voltage of 9V minimum. It offers a clamping voltage of 13.7V at a peak pulse current (Ipp) of 10.9A (10/1000µs), with a peak pulse power rating of 1000W. The MUPTB8E3 is housed in a compact Surface Mount Powermite 1 (DO216AA) package, ideal for space-constrained designs. Its operating temperature range is -65°C to 150°C. This diode is suitable for general-purpose applications across various industries requiring transient suppression.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-216AA |
| Mounting Type | Surface Mount |
| Type | Zener |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Applications | General Purpose |
| Capacitance @ Frequency | - |
| Current - Peak Pulse (10/1000µs) | 10.9A |
| Voltage - Reverse Standoff (Typ) | 8V |
| Supplier Device Package | Powermite 1 (DO216-AA) |
| Bidirectional Channels | 1 |
| Voltage - Breakdown (Min) | 9V |
| Voltage - Clamping (Max) @ Ipp | 13.7V |
| Power - Peak Pulse | 1000W (1kW) |
| Power Line Protection | No |
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