MUPTB33E3
TVS DIODE 33VWM 56.7VC POWERMIT1Manufacturer: Microchip Technology
Categories: TVS Diodes
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The Microchip Technology MUPTB33E3 is a unidirectional TVS diode designed for transient voltage suppression. Featuring a reverse standoff voltage of 33V and a minimum breakdown voltage of 36.8V, this component offers robust protection. It provides a maximum clamping voltage of 56.7V at a peak pulse current of 2.65A (10/1000µs), with a peak pulse power rating of 1000W (1kW). The MUPTB33E3 is housed in a surface mount Powermite 1 (DO-216AA) package, suitable for applications requiring compact integration. Operating across a temperature range of -65°C to 150°C, this device is commonly employed in general-purpose applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-216AA |
| Mounting Type | Surface Mount |
| Type | Zener |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Applications | General Purpose |
| Capacitance @ Frequency | - |
| Current - Peak Pulse (10/1000µs) | 2.65A |
| Voltage - Reverse Standoff (Typ) | 33V |
| Supplier Device Package | Powermite 1 (DO216-AA) |
| Bidirectional Channels | 1 |
| Voltage - Breakdown (Min) | 36.8V |
| Voltage - Clamping (Max) @ Ipp | 56.7V |
| Power - Peak Pulse | 1000W (1kW) |
| Power Line Protection | No |
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