MUPTB10E3
TVS DIODE 10VWM 18VC POWERMITE 1Manufacturer: Microchip Technology
Categories: TVS Diodes
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Microchip Technology's MUPTB10E3 is a unidirectional Transil™ diode designed for transient voltage suppression. This component offers a 10V reverse standoff voltage (VRWM) and a breakdown voltage of 11V (VBR). With a peak pulse current handling of 8.33A (Ipp) for a 10/1000µs waveform, it delivers a maximum clamping voltage of 18V at this current. The device provides 1000W (1kW) of peak pulse power dissipation. Housed in the compact Powermite 1 (DO216AA) surface-mount package, it operates across a wide temperature range of -65°C to 150°C (TJ). This TVS diode is suitable for general-purpose applications, including automotive and industrial electronics, where protection against voltage transients is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-216AA |
| Mounting Type | Surface Mount |
| Type | Zener |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Applications | General Purpose |
| Capacitance @ Frequency | - |
| Current - Peak Pulse (10/1000µs) | 8.33A |
| Voltage - Reverse Standoff (Typ) | 10V |
| Supplier Device Package | Powermite 1 (DO216-AA) |
| Bidirectional Channels | 1 |
| Voltage - Breakdown (Min) | 11V |
| Voltage - Clamping (Max) @ Ipp | 18V |
| Power - Peak Pulse | 1000W (1kW) |
| Power Line Protection | No |
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