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MAP6KE82AE3

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MAP6KE82AE3

TVS DIODE 70.1VWM 113VC T18

Manufacturer: Microchip Technology

Categories: TVS Diodes

Quality Control: Learn More

Microchip Technology MAP6KE82AE3 is a through-hole TVS diode designed for robust voltage transient suppression. This component features a reverse standoff voltage of 70.1V (typical) and a minimum breakdown voltage of 77.9V. It offers a clamping voltage of 113V at a peak pulse current (Ipp) of 5.3A, delivering 600W of peak pulse power. The T-18 axial package is suitable for applications requiring reliable protection against voltage surges. Qualified to MIL-PRF-19500 standards and manufactured with a military grade, this device is engineered for demanding environments. Its operational temperature range is -65°C to 150°C (TJ). This component is utilized in general-purpose applications where transient voltage protection is critical.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseT-18, Axial
Mounting TypeThrough Hole
TypeZener
Operating Temperature-65°C ~ 150°C (TJ)
ApplicationsGeneral Purpose
Capacitance @ Frequency-
Current - Peak Pulse (10/1000µs)5.3A
Voltage - Reverse Standoff (Typ)70.1V
Supplier Device PackageT-18
Unidirectional Channels1
Voltage - Breakdown (Min)77.9V
Voltage - Clamping (Max) @ Ipp113V
Power - Peak Pulse600W
Power Line ProtectionNo
GradeMilitary
QualificationMIL-PRF-19500

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