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MAP6KE30AE3

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MAP6KE30AE3

TVS DIODE 25.6VWM 41.4VC T18

Manufacturer: Microchip Technology

Categories: TVS Diodes

Quality Control: Learn More

Microchip Technology MAP6KE30AE3 is a 600W Silicon Avalanche Diode designed for transient voltage suppression. This through-hole component, packaged in a T-18 axial case, offers a reverse standoff voltage of 25.6V and a breakdown voltage of 28.5V (minimum). It provides a maximum clamping voltage of 41.4V at a peak pulse current (Ipp) of 14.4A for a 10/1000µs waveform. The device operates across a temperature range of -65°C to 150°C. Qualified to MIL-PRF-19500 and bearing a military grade, this TVS diode is suited for demanding applications including aerospace and defense systems. Its robust construction and performance characteristics make it ideal for protecting sensitive circuitry from voltage transients.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseT-18, Axial
Mounting TypeThrough Hole
TypeZener
Operating Temperature-65°C ~ 150°C (TJ)
ApplicationsGeneral Purpose
Capacitance @ Frequency-
Current - Peak Pulse (10/1000µs)14.4A
Voltage - Reverse Standoff (Typ)25.6V
Supplier Device PackageT-18
Unidirectional Channels1
Voltage - Breakdown (Min)28.5V
Voltage - Clamping (Max) @ Ipp41.4V
Power - Peak Pulse600W
Power Line ProtectionNo
GradeMilitary
QualificationMIL-PRF-19500

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